The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Oct. 09, 2023
Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Manoj Shenoy, Kochi, IN;

Gopu S, Kollam, IN;

Binoy Jose Panakkal, Kochi, IN;

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/28 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/3445 (2013.01);
Abstract

Technology for reading memory cells in three-dimensional memory having multiple tiers. The memory system erases the tiers within each block independently. Then, memory cells in the tiers are programmed by units such as word lines. The memory system determines one or more read parameters for the selected tier based on the programmed/erased states of the other tiers in the block. For example, the memory system may select read reference levels for the selected tier based on the programmed/erased states of the other tiers. In an aspect, the one or more read parameters are used to determine the set of reference voltages for a bit error rate estimation scan (BES).


Find Patent Forward Citations

Quick Actions:

Shenoy, Manoj. (2026). Read in multi-tier non-volatile memory (U.S. Patent No. 12784840). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12784840

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