The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Dec. 05, 2024
Applicant:

Cxmt Corporation, Hefei City, CN;

Inventor:

Shufang Si, Hefei City, CN;

Assignee:

CXMT Corporation, Hefei City, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); G11C 11/408 (2006.01); G11C 11/4094 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4087 (2013.01); G11C 11/4085 (2013.01); G11C 11/4094 (2013.01);
Abstract

The present disclosure provides a memory and a control method therefor, and an electronic device. In a first chip of the memory, each local bit line is coupled to a common bit line on one side through a respective bit line selector, and each local bit line is coupled to a common bit line on the other side through a respective precharge switch. The bit line selector is configured to receive a sub word line drive signal, and selectively connect a connected local bit line to a connected common bit line based on the sub word line drive signal. The precharge switch is configured to receive a sub word line drive complementary signal, and selectively connect a connected local bit line to a connected common bit line based on the sub word line drive complementary signal.


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Si, Shufang. (2026). Memory and control method therefor, and electronic device (U.S. Patent No. 12784809). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12784809

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