Thermal monitor for high pressure processing

Abstract

A semiconductor processing system includes a precursor delivery arrangement, a chamber arrangement, and a controller. The chamber arrangement is connected to the precursor delivery arrangement. The controller is operatively connected to the precursor delivery arrangement and the chamber arrangement, includes a processor disposed in communication with a memory, and is responsive to instructions recorded on the memory to acquire a baseline substrate thickness profile for a selected process recipe, determine a first temperature profile setting for depositing a first material layer at low pressure for the selected process recipe, determine a high-pressure thermal offset for the first temperature profile setting, apply the high-pressure thermal offset to the first temperature profile setting to determine a second temperature profile setting, seat a first substrate on the first substrate support within the chamber arrangement and flow a second material layer precursor via the precursor delivery arrangement over the first substrate at high pressure according to the selected process recipe using the second temperature profile setting.