The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Mar. 28, 2024
Hexatech, Inc., Morrisville, NC (US);
Rafael Dalmau, Raleigh, NC (US);
Raoul Schlesser, Raleigh, NC (US);
Samuel Kirby, Raleigh, NC (US);
Jeffrey Britt, Henderson, NC (US);
Hexatech, Inc., Morrisville, NC (US);
Abstract
The present disclosure provides a method for forming an aluminum nitride single crystalline substrate that includes growing an AlN single crystalline boule followed by cooling the AlN single crystalline boule in three phases including a first cooling phase from the crystal growth temperature to a first intermediate temperature of about 1900° C. to about 1800° C., a second cooling phase from the first intermediate temperature to a second intermediate temperature of about 1500° C. to about 1400° C., wherein the second cooling phase is characterized by a cooling rate of 5.0° C. per minute or less, and a third cooling phase from the second intermediate temperature to room temperature. Also provided is an aluminum nitride single crystalline substrate having a dimensionless figure of merit (FOM) of 0.4 or above and optoelectronic devices made therefrom.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile