The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2026

Filed:

Sep. 01, 2023
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventors:

Atsushi Ono, Nagaokakyo, JP;

Yoshiaki Sukemori, Nagaokakyo, JP;

Yoshiki Kogushi, Nagaokakyo, JP;

Hisanori Namie, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 20/20 (2026.01); H10W 70/60 (2026.01); H10W 70/63 (2026.01); H10W 72/20 (2026.01); H10W 72/90 (2026.01);
U.S. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 20/20 (2026.01); H10W 70/611 (2026.01); H10W 70/635 (2026.01); H10W 72/244 (2026.01); H10W 72/942 (2026.01); H10W 90/724 (2026.01); H10W 90/794 (2026.01);
Abstract

A high frequency module capable of improving a heat dissipation performance of a power amplifier includes a mounting board, a power amplifier, and a connection member. The mounting board has a first main surface facing a second main surface. The power amplifier is disposed on the second main surface of the mounting board. The connection member is connectable to an external board. The power amplifier includes a base material, a transistor, and a through via. The base material has a third main surface facing a fourth main surface, and the third main surface is disposed between the second main surface and the fourth main surface. The transistor is disposed on the third main surface of the base material. The through via is provided between the third main surface and the fourth main surface. The through via is connected to the connection member.


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Ono, Atsushi. (2026). High frequency module and communication device (U.S. Patent No. 12777980). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777980

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