The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2026

Filed:

Jan. 05, 2024
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seungho Hahn, Suwon-si, KR;

Wooyoung Kim, Suwon-si, KR;

Minwoo Rhee, Suwon-si, KR;

Bumki Moon, Suwon-si, KR;

Kyeongbin Lim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 72/00 (2026.01);
U.S. Cl.
CPC ...
H10W 72/013 (2026.01); H10W 72/01353 (2026.01); H10W 72/01365 (2026.01);
Abstract

A method of manufacturing a semiconductor device includes preparing a first substrate and a second substrate respectively including a bonding layer having metal pads and a dielectric layer, performing a planarization process on a surface of the bonding layer of each of the first and second substrates, applying wet atomic layer etching to the surface of the bonding layer so that a surface of the metal pad is recessed to a target depth, and bonding the bonding layer of the first substrate to the bonding layer of the second substrate using an annealing process.


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Quick Actions:

Hahn, Seungho. (2026). Wet atomic layer etching method and method of manufacturing the same (U.S. Patent No. 12777956). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777956

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