The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Mar. 13, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a first gate structure, a first source/drain layer and a first contact plug. The first gate structure is formed on a substrate, and extends in a second direction parallel to an upper surface of the substrate. The first source/drain layer is formed at a side of the first gate structure in a first direction substantially parallel to the upper surface of the substrate and crossing the second direction. A central portion in the first direction of an upper surface of the first source/drain layer is lower than an edge portion in the first direction of the upper surface of the first source/drain layer. The first contact plug is formed on the first source/drain layer, and contacts the edge portion of the upper surface of the first source/drain layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile