The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Sep. 09, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hajun Sung, Suwon-si, KR;
Minwoo Choi, Suwon-si, KR;
Youngjae Kang, Suwon-si, KR;
Kiyeon Yang, Suwon-si, KR;
Changseung Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A chalcogenide-based memory material may include a ternary semiconductor compound having a composition represented by XY'Se, wherein the chalcogenide-based memory material may have an ovonic threshold-switching (OTS) characteristic, and a threshold voltage of the chalcogenide-based memory material may change according to a polarity and an intensity of an applied voltage. In XY′Se, X≠Y, a+b+c=1, a>0.12, b>0.18, c≥0.4, and X and Y′ independently may be different ones of In, Sb, Ga, Sn, Al, Ge, Si, and P. A memory device may include the chalcogenide-based memory material. An electronic apparatus may include the memory device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile