The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2026

Filed:

Nov. 03, 2021
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Jie Huang, Beijing, CN;

Ce Ning, Beijing, CN;

Zhengliang Li, Beijing, CN;

Hehe Hu, Beijing, CN;

Nianqi Yao, Beijing, CN;

Kun Zhao, Beijing, CN;

Tianmin Zhou, Beijing, CN;

Liping Lei, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01); H10K 10/40 (2023.01); H10K 71/00 (2023.01);
U.S. Cl.
CPC ...
H10K 71/00 (2023.02); H10D 30/031 (2025.01); H10D 30/6729 (2025.01); H10D 30/673 (2025.01); H10D 30/6733 (2025.01); H10K 10/40 (2023.02);
Abstract

A thin film transistor, an array substrate and a manufacturing method of the thin film transistor are provided, the thin film transistor includes a base substrate; and a first active layer, a first insulating layer and a second active layer, which are sequentially arranged on the base substrate, the first active layer is in contact with the second active layer through a first via hole structure located in the first insulating layer, and non-contacted portions of the first active layer and the second active layer are separated by the first insulating layer, the thin film transistor has a plurality of active layer structures, so that the charges are gathered on two surfaces of each of the active layers, and the number of the charges gathered on the surfaces of the active layers is multiplied, and the open state current of the thin film transistor is multiplied.


Find Patent Forward Citations

Huang, Jie. (2026). Thin film transistor, manufacturing method thereof, and array substrate (U.S. Patent No. 12777830). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777830

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…