The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Dec. 19, 2023
Applicant:
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Inventors:
Fabian Rol, Grenoble, FR;
Amélie Dussaigne, Grenoble, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 27/146 (2006.01); H10F 39/00 (2025.01); H10H 20/01 (2025.01); H10H 20/825 (2025.01); H10H 29/14 (2025.01); H10H 20/815 (2025.01); H10P 50/24 (2026.01); H10P 50/64 (2026.01);
U.S. Cl.
CPC ...
H10H 20/0137 (2025.01); H10F 39/026 (2025.01); H10H 20/825 (2025.01); H10H 29/14 (2025.01); H10H 20/815 (2025.01); H10P 50/242 (2026.01); H10P 50/646 (2026.01);
Abstract
A method for manufacturing a growth substrate adapted to produce by epitaxy a matrix of diodes based on InGaN, including the following steps of:
Quick Actions:
Rol, Fabian. (2026). Method for manufacturing a growth substrate including mesas of various deformabilities, by etching and electrochemical porosification (U.S. Patent No. 12777743). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777743
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile