The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
May. 19, 2023
The Administrators of the Tulane Educational Fund, New Orleans, LA (US);
Matthew David Escarra, New Orleans, LA (US);
Kazi M. Islam, New Orleans, LA (US);
Timothy Ismael, New Orleans, LA (US);
THE ADMINISTRATORS OF THE TULANE EDUCATIONAL FUND, New Orleans, FL (US);
Abstract
An optoelectronic device includes a thin film of a transition-metal dichalcogenide, a first electrode made of a first metal directly contacting the thin film, and a second electrode made of a second metal directly contacting the thin film. The first metal is molybdenum, titanium, aluminum, tantalum, scandium, or yttrium. The second metal is platinum, nickel, palladium, gold, or cobalt. Depending on the type and doping of the transition-metal dichalcogenide, one of the first and second metals forms an electron selective layer with the transition-metal dichalcogenide and the other of the first and second metals forms a hole selective layer with the transition-metal dichalcogenide. The thin film may be a monolayer or multilayer. The transition-metal dichalcogenide may be molybdenum disulfide. The thin film may be grown via chemical vapor deposition and have an area of 0.25 cmor more.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile