The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Sep. 22, 2023
Applicant:
Hamamatsu Photonics K.k., Hamamatsu, JP;
Inventors:
Assignee:
HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0368 (2006.01); H10F 30/222 (2025.01); H10F 71/00 (2025.01); H10F 77/164 (2025.01); H10F 77/20 (2025.01);
U.S. Cl.
CPC ...
H10F 77/1642 (2025.01); H10F 30/222 (2025.01); H10F 71/1215 (2025.01); H10F 77/241 (2025.01);
Abstract
A photodetection element includes an N-type silicon layer formed in a single crystal state, a P-type germanium-containing layer formed in a polycrystal state and forming a hetero PN junction between the germanium-containing layer and the silicon layer, a first electrode electrically connected to the silicon layer, and a second electrode electrically connected to the germanium-containing layer.
Quick Actions:
Nakajima, Kazutoshi. (2026). Photodetection element and method for manufacturing photodetection element (U.S. Patent No. 12777738). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777738
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile