The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2026

Filed:

Feb. 17, 2021
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Ken Imamura, Tokyo, JP;

Shuichi Hiza, Tokyo, JP;

Kunihiko Nishimura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/85 (2025.01); H10D 62/83 (2025.01); H10P 14/20 (2026.01); H10P 50/00 (2026.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10D 62/8503 (2025.01); H10D 62/8303 (2025.01); H10P 14/3416 (2026.01); H10P 50/73 (2026.01); H10W 20/082 (2026.01);
Abstract

It is an object of the present disclosure to impart desired high frequency characteristics to a nitride semiconductor device including diamond as a substrate at a low cost. In the nitride semiconductor device according to the present disclosure, a via hole extends from a first main surface of a diamond layer through the diamond layer, an intermediate layer, and a nitride semiconductor layer to an electrode. The via hole has a multi-step structure including a large-diameter via hole being in contact with the first main surface of the diamond layer and a small-diameter via hole facing the electrode, having a smaller diameter than the large-diameter via hole, and being tapered.


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Imamura, Ken. (2026). Nitride semiconductor device and method for manufacturing nitride semiconductor device (U.S. Patent No. 12777694). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777694

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