The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Dec. 14, 2021
Beijing Superstring Academy of Memory Technology, Beijing, CN;
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Huilong Zhu, Poughkeepsie, NY (US);
Zhongrui Xiao, Beijing, CN;
BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY, Beijing, CN;
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES, Beijing, CN;
Abstract
The vertical MOSFET device includes: an active region including a first source/drain layer, a channel layer and a second source/drain layer vertically stacked on a substrate in sequence, wherein an outer periphery of the channel layer is recessed with respect to outer peripheries of the first source/drain layer and the second source/drain layer; a spacing layer including an upper spacing layer and a lower spacing layer, wherein the upper spacing layer and the lower spacing layer are both in contact with a side surface of the channel layer and are not in communication with each other; and a gate stack formed at least on a lateral outer periphery of the channel layer and embedded in a groove space between the upper spacing layer and the lower spacing layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile