The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
May. 27, 2022
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Naveen Ganagona, Fishkill, NY (US);
George Chang, Tempe, AZ (US);
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 8/00 (2025.01); H10D 62/17 (2025.01); H10P 30/20 (2026.01); H10P 32/10 (2026.01); H10P 32/12 (2026.01);
U.S. Cl.
CPC ...
H10D 12/441 (2025.01); H10D 62/393 (2025.01); H10P 30/20 (2026.01); H10P 32/12 (2026.01); H10P 32/171 (2026.01); H10D 8/00 (2025.01);
Abstract
A semiconductor device includes a backside contact and a substrate. An epitaxial field stop region may be formed on the substrate with a graded doping profile that decreases with distance away from the substrate, and an epitaxial drift region may be formed adjacent to the epitaxial field stop region. A frontside device may be formed on the epitaxial drift region.
Quick Actions:
Ganagona, Naveen. (2026). Epitaxial field stop region for semiconductor devices (U.S. Patent No. 12777668). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777668
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile