The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Jun. 01, 2023
Mediatek Inc., Hsinchu City, TW;
MEDIATEK INC., Hsinchu City, TW;
Abstract
Semiconductor structures of bipolar junction transistor (BJT) are provided. A first active region of a collection region is formed over a first P-type well region. Second and third active regions of a base region are formed over an N-type well region. A fourth active region of an emitter region is formed over a second P-type well region. The first active region includes a plurality of first fins and a plurality of first source/drain features epitaxially grown on the first fins. Each of the second and third active regions includes a plurality of second fins and a plurality of second source/drain features epitaxially grown on the second fins. The fourth active region includes a plurality of third fins and a plurality of third source/drain features epitaxially grown on the third fins. The second and third active regions are disposed on opposite sides of the fourth active region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile