The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2026

Filed:

Jul. 24, 2023
Applicant:

Stmicroelectronics (Tours) Sas, Tours, FR;

Inventor:

Mohamed Boufnichel, Monnaie, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/00 (2025.01); H10D 1/68 (2025.01); H10P 14/694 (2026.01); H10P 50/00 (2026.01); H10P 50/26 (2026.01); H10P 50/28 (2026.01);
U.S. Cl.
CPC ...
H10D 1/042 (2025.01); H10D 1/043 (2025.01); H10D 1/716 (2025.01); H10P 14/69433 (2026.01); H10P 50/267 (2026.01); H10P 50/283 (2026.01); H10P 50/71 (2026.01); H10P 50/73 (2026.01);
Abstract

The present disclosure relates to a capacitor including a first conductive layer over which is formed a stack, comprising from the upper face of the first layer, a first electrode, a first dielectric layer, a second electrode, and a second conductive layer, the stack comprising a stair step within the second conductive layer, the second electrode, and a part of the thickness of the first dielectric layer, the stair step being filled with a second dielectric layer so that the sidewalls of the first electrode are aligned with respect to the sidewalls of the second dielectric layer.


Find Patent Forward Citations

Quick Actions:

Boufnichel, Mohamed. (2026). Method of fabricating a capacitor (U.S. Patent No. 12777662). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777662

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