The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Mar. 01, 2023
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Xinshu Cai, Singapore, SG;
Shyue Seng Tan, Singapore, SG;
Assignee:
GLOBALFOUNDRIES Singapore Pie. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10D 1/042 (2025.01); H10D 1/716 (2025.01);
Abstract
A capacitor structure is provided. The capacitor structure includes a substrate, a first electrode, a second electrode, and a third electrode. The first electrode is in the substrate. The second electrode is over the substrate. The third electrode is over the second electrode and includes a middle portion over the second electrode and end portions laterally adjacent to the second electrode.
Quick Actions:
Cai, Xinshu. (2026). Capacitor structures of semiconductor devices (U.S. Patent No. 12777661). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777661
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile