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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12777640 B1

PDFFull Text
Date of Patent:
Oct. 27, 2026

Filed:

Jul. 27, 2022

Semiconductor device and method of manufacturing the same

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Shinji Inoue, Tokyo, JP;

Assignee:

Renesas Electronics Corporation, Tokyo, JP;

Attorney:

Rimon P.C.

Primary Examiner:

Jack S Chen

Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 43/30 (2023.01); H10D 30/01 (2025.01); H10D 30/69 (2025.01); H10D 62/85 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 43/30 (2023.02); H10D 30/0413 (2025.01); H10D 30/69 (2025.01); H10D 62/8503 (2025.01); H10D 64/037 (2025.01);
Abstract

A semiconductor device capable of shortening an erasing time and suppressing deterioration of retention characteristics is provided. A semiconductor device includes: a semiconductor substrate having a main surface; a gate insulating film formed on the main surface; and a gate electrode formed on the gate insulating film. The gate insulating film includes a first silicon nitride film, and a first silicon oxide film arranged between the main surface and the first silicon nitride film and in contact with the first silicon nitride film. A Si—Si bond is formed in a boundary portion between the first silicon oxide film first silicon nitride film.

Find Patent Forward Citations

Inoue, Shinji. (2026). Semiconductor device and method of manufacturing the same (U.S. Patent No. 12777640). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777640

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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