Temperature dependent driving of gate of iii-nitride high electron mobility transistor

Abstract

The driving of a gate terminal of a High Electron Mobility Transistor (HEMT) such that the magnitude of the signal depends on temperature. Such transistors allow power to be transferred with much less power loss than conventional transistors, by using a two-dimensional electron gas (2DEG) to transfer current with high mobility. The reduced power loss is enabled by the high mobility of charge carriers in the 2DEG. Such a transistor has a channel semiconductor layer composed of a III-Nitride semiconductor. The channel semiconductor layer is immediately beneath a barrier semiconductor layer to form a heterojunction interface with the barrier semiconductor layer, which induces the 2DEG within the channel semiconductor layer. By applying lower temperatures to the gate terminal of the transistor than at higher temperatures, damage to the transistor is avoided.