The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Aug. 13, 2024
Analog Devices International Unlimited Company, Limerick, IE;
Gönenç Berkol, Limerick, IE;
Devrim Yilmaz Aksin, Wilmington, MA (US);
Brian D. Hamilton, Wilmington, MA (US);
Analog Devices International Unlimited Company, Limerick, IE;
Abstract
High-voltage (HV) semiconductor switches are used in various applications. On-impedance (Ron) of the HV switches is prone to process, voltage, and temperature (PVT) variations. The present invention discloses system and method embodiments to calibrate a gate-to-source voltage (Vgs) of the switch based on a low temperature coefficient resistor and current references. The Ron of a replica switch transistor is matched to a reference resistor using a feedback to generate the required Vgs voltage. The calibrated Vgs is enforced to the floating HV switch transistor via controlling the bias current of a replica gate driver by feedback. With this approach, a desired input current to the gate driver may be obtained and applied to a main gate driver to control the Ron of the floating HV switches. Simulation results demonstrate a significant improvement in Ron variation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile