The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
May. 10, 2022
Hitachi Power Semiconductor Device, Ltd., Hitachi, JP;
Taiga Arai, Hitachi, JP;
Daisuke Kawase, Hitachi, JP;
Akira Mima, Tokyo, JP;
Katsuaki Saito, Hitachi, JP;
MINEBEA POWER SEMICONDUCTOR DEVICE INC., Ibaraki, JP;
Abstract
Provided is a power semiconductor module comprising: a gate terminal to which a control signal is inputted; a reference potential terminal disposed adjacent to the gate terminal with a predetermined interval from the gate terminal; a main circuit wiring disposed in the vicinity of the reference potential terminal and the gate terminal; and an electromagnetic shield disposed between the gate terminal and the reference potential terminal to shield induction field generated by current flowing through the main circuit wiring. The present invention is also characterized in that: the electromagnetic shield is integrally formed with the gate terminal and/or the reference potential terminal; and, in a portion between the gate terminal and the reference potential terminal, a gap that is not shielded by the electromagnetic shield as seen from a direction in which a magnetic flux of the induction field intersects with the electromagnetic shield, is 1 mm or less.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile