The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2026

Filed:

Aug. 01, 2024
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seo-Hyun Shin, Suwon-si, KR;

Kyungduk Lee, Suwon-si, KR;

Daehyeon Jo, Suwon-si, KR;

Youngsik Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01);
U.S. Cl.
CPC ...
G11C 29/789 (2013.01); G11C 29/76 (2013.01);
Abstract

A memory device includes a memory cell array configured to include a first memory cell for storing user data and a second memory cell for a column repair of the first memory cell; a page buffer circuit configured to include a first page buffer connected to the first memory cell and a second page buffer connected to the second memory cell; and a page buffer latch input/output circuit configured to use at least one data latch of the second page buffer as a substitute for a buffer memory during a data latch use operation.


Find Patent Forward Citations

Shin, Seo-Hyun. (2026). Memory device using data latch (U.S. Patent No. 12776387). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12776387

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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