The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Jan. 19, 2023
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Lui Sakai, Kanagawa, JP;
Yutaka Higo, Kanagawa, JP;
Keizo Hiraga, Kanagawa, JP;
Masanori Hosomi, Kanagawa, JP;
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Tokyo, JP;
Abstract
A magnetoresistive effect memory including a magnetoresistive element and a write circuit is provided. The magnetoresistive element includes a fixed layer whose magnetization direction is fixed and a recording layer whose magnetization direction changes. The write circuit reverses magnetization of the recording layer so that a resistance value of the magnetoresistive element is gradually changed between a low resistance value and a high resistance value. The magnetization of the recording layer rotates by precession around a magnetic field in a plane direction of the layer in a case where a voltage is applied to the magnetoresistive element. The write circuit reverses the magnetization of the recording layer so that the resistance value of the magnetoresistive element is switched from the high resistance value to the low resistance value based on application of a current limited so as to have a specific magnitude to the magnetoresistive element.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile