The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Dec. 19, 2024
Imec Vzw, Leuven, BE;
Katholieke Universiteit Leuven, Ku Leuven R&d, Leuven, BE;
Woojin Kim, Watermael-Boitsfort, BE;
Robert Carpenter, Kessel-Lo, BE;
Maxwel Gama Monteiro Junior, Leuven, BE;
Imec vzw, Leuven, BE;
Katholieke Universiteit Leuven, Leuven, BE;
Abstract
A memory stack for a VCMA-MRAM device includes a magnetic tunnel junction (MTJ) layer structure, an auxiliary magnetic layer structure including a second hard magnetic layer and an auxiliary magnetic layer, and an interposer layer structure interposing a free layer of the MTJ layer structure and the auxiliary magnetic layer of the auxiliary magnetic layer structure. The interposer layer structure includes a second barrier layer configured to induce a VCMA in the auxiliary magnetic layer and a non-magnetic spacer layer interposing the second barrier layer and the free layer. In response to a first bias voltage exceeding a first threshold voltage across the memory stack, the VCMA induced in the auxiliary magnetic layer causes the auxiliary magnetic layer to be destabilized from a pinned magnetization state with a magnetization oriented along the first direction, and brought to a destabilized magnetization state.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile