The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

May. 17, 2022
Applicant:

Hitachi Power Semiconductor Device, Ltd., Ibaraki, JP;

Inventors:

Toru Masuda, Tokyo, JP;

Daisuke Ikarashi, Tokyo, JP;

Kan Yasui, Ibaraki, JP;

Takayuki Kushima, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 90/00 (2026.01); H02M 7/537 (2006.01);
U.S. Cl.
CPC ...
H10W 90/701 (2026.01); H10W 90/00 (2026.01); H10W 90/401 (2026.01); H02M 7/537 (2013.01); H10W 90/754 (2026.01);
Abstract

A semiconductor module comprises: an insulating substrate having a main terminal, a conductor layer, and a sense terminal; an insulating substrate disposed opposite the insulating substrate and having a conductor layer; and a sensing spacer conductor which is electrically connected to the sense terminal and electrically connects from the insulating substrate side to the conductor layer of the insulating substrate while keeping an interval between the insulating substrate and the insulating substrate. One sensing spacer conductor corresponds to a plurality of semiconductor switching elements.


Find Patent Forward Citations

Masuda, Toru. (2026). Power semiconductor module and power conversion device (U.S. Patent No. 12772916). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772916

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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