The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Mar. 24, 2022
Resonac Corporation, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes providing a first integrated circuit element including a first semiconductor substrate, a first insulating film, and a first electrode, providing a second integrated circuit element including a second semiconductor substrate, a second insulating film, and a second electrode, bonding the first insulating film and the second insulating film to each other, and bonding the first electrode and the second electrode to each other. The first insulating film includes a first inorganic insulating layer and a first organic insulating layer. The second insulating film includes a second inorganic insulating layer and a second organic insulating layer. The thickness of the first organic insulating layer is smaller than the thickness of the first inorganic insulating layer, and the thickness of the second organic insulating layer is smaller than the thickness of the second inorganic insulating layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile