The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Sep. 01, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Naoya Shiroshita, Fujisawa Kanagawa, JP;

Masayuki Miura, Tokyo, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 74/10 (2026.01); H10W 42/00 (2026.01); H10W 74/01 (2026.01); H10W 74/47 (2026.01);
U.S. Cl.
CPC ...
H10W 74/121 (2026.01); H10W 42/121 (2026.01); H10W 74/01 (2026.01); H10W 74/473 (2026.01);
Abstract

A semiconductor device includes: a wiring substrate; at least one first semiconductor element provided above the wiring substrate; a first resin layer configured to seal the first semiconductor element; and a second resin layer provided on an outer surface of the first resin layer. A Young's modulus of the second resin layer is greater than a Young's modulus of the first resin layer, and/or a linear thermal expansion coefficient of the second resin layer is greater than a linear thermal expansion coefficient of the first resin layer.


Find Patent Forward Citations

Shiroshita, Naoya. (2026). Semiconductor device and method of manufacturing semiconductor device (U.S. Patent No. 12772896). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772896

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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