The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Mar. 18, 2022
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Hideyuki Hatta, Tokyo, JP;

Shinichi Kinouchi, Tokyo, JP;

Hayato Nakata, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/492 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01); H10W 70/20 (2026.01); H10W 72/00 (2026.01); H10W 72/30 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 70/24 (2026.01); H10W 70/22 (2026.01); H10W 90/00 (2026.01); H10W 72/07354 (2026.01); H10W 72/347 (2026.01); H10W 72/352 (2026.01); H10W 90/736 (2026.01); H10W 90/796 (2026.01);
Abstract

Provided is a small-sized inexpensive semiconductor module in which increase of ON resistance and increase of turn-off surge voltage at low temperature are suppressed. The semiconductor module includes: a semiconductor switching element; and a stress application portion provided on one or each of a first surface and a second surface on an opposite side to the first surface of the semiconductor switching element, having a linear expansion coefficient larger than that of a main material of the semiconductor switching element, and having a larger thickness than the semiconductor switching element. The stress application portion generates compressive or tensile stress in the semiconductor switching element through thermal shrinkage or expansion of the stress application portion due to change in temperature. A threshold voltage at which the semiconductor switching element is turned on, decreases in association with increase of a magnitude of the compressive or tensile stress in the semiconductor switching element.


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Hatta, Hideyuki. (2026). Semiconductor module (U.S. Patent No. 12772867). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772867

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