The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Mar. 01, 2024
Applicant:

Lisa Dräxlmaier Gmbh, Vilsbiburg, DE;

Inventor:

Stefan Hofinger, Sankt Wolfgang, DE;

Assignee:

Lisa Dräxlmaier GmbH, Vilsbiburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 44/00 (2026.01); G01R 31/26 (2020.01); H02H 3/08 (2006.01); H03K 17/08 (2006.01); H03K 17/082 (2006.01); H10W 42/80 (2026.01);
U.S. Cl.
CPC ...
H10W 42/80 (2026.01); G01R 31/2621 (2013.01); H02H 3/08 (2013.01); H03K 17/0822 (2013.01);
Abstract

A semiconductor fuse for disconnecting an electric consumer from an energy supply source for a battery electric vehicle includes at least one semiconductor switch element that is connected between the energy supply source and the electric consumer. The semiconductor switch element includes a gate control terminal for controlling a switch-on and switch-off of the semiconductor switch element. The semiconductor fuse includes: a driver circuit for applying a driver voltage that is lower than a predetermined gate threshold voltage of the semiconductor switch element at the gate control terminal of the at least one semiconductor switch element; a measurement circuit for determining a gate charge at the gate control terminal; and a control system that detects a drift of the gate threshold voltage based on the gate charge and indicates an issue with the semiconductor switch element based on the detected drift of the gate threshold voltage.


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Hofinger, Stefan. (2026). Semiconductor fuse with measurement circuit for the detecting of a drift of the gate threshold voltage (U.S. Patent No. 12772859). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772859

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