The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Apr. 12, 2024
Denso Corporation, Kariya-city, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Mirise Technologies Corporation, Nisshin, JP;
DENSO CORPORATION, Kariya-city, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
MIRISE Technologies Corporation, Nisshin, JP;
Abstract
A semiconductor device includes a semiconductor element, an anisotropic graphite, a first bonding layer, an insulating member, a metal plate, a second bonding layer, and a third bonding layer. The semiconductor element has a chip shape. The anisotropic graphite has one surface to which the semiconductor element is disposed. A direction along the one surface is a c-axis direction of the anisotropic graphite. The first bonding layer bonds the semiconductor element to the one surface of the anisotropic graphite. The insulating member has a plate shape, is disposed across the anisotropic graphite from the semiconductor element, and insulates the anisotropic graphite. The metal plate is made of a metal material, has a plate shape, and is disposed between the anisotropic graphite and the insulating member. The second bonding layer bonds the anisotropic graphite and the metal plate. The third bonding layer bonds the metal plate and the insulating member.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile