The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Dec. 07, 2023
Kioxia Corporation, Tokyo, JP;
Hiroshi Noguchi, Yokkaichi Mie, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor device according to an embodiment comprises: a first insulating film; a second insulating film provided on the first insulating film; a third insulating film provided on the second insulating film; a first wiring provided in a first groove provided in the first insulating film; and a second wiring provided in a second groove provided in communication with the first insulating film, the second insulating film, and the third insulating film and connected to the first wiring, wherein the second insulating film contains silicon oxynitride, the second insulating film has a processing selectivity higher than processing selectivity of the first insulating film and the third insulating film, and the second insulating film has a dielectric strength voltage higher than a dielectric strength of silicon nitride.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile