The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Oct. 29, 2024
Nanya Technology Corporation, New Taipei City, TW;
Jung Tzu Peng, New Taipei City, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;
Abstract
A manufacturing method of a semiconductor structure is provided. The method includes the following steps. A target layer and a hardmask layer are sequentially formed on a substrate. A part of the hardmask layer is removed to form a recess. A plurality of first patterns are formed on a top surface of the hardmask layer and a plurality of second patterns are formed in the recess simultaneously. A pattern density of the plurality of first patterns is smaller than that of the plurality of second patterns. The hardmask layer and the target layer are patterned using the first patterns and the second patterns as a mask to form a plurality of first target patterns corresponding to the plurality of first patterns and a plurality of second target patterns corresponding to the plurality of second patterns in the target layer. The first and second patterns and the hardmask layer are removed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile