The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Apr. 04, 2024
Nanya Technology Corporation, New Taipei city, TW;
Jung Tzu Peng, New Taipei City, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;
Abstract
Embodiments of this disclosure provide a method of manufacturing a semiconductor structure, including the following steps. A substrate with an active device layer on the substrate is provided. A stack film layer on the active device layer is formed. A resist platform layer on the stack film layer is formed. A blocking layer is deposited on the resist platform layer conformally. A photoresist layer is formed on the blocking layer, and a top surface of the photoresist layer is higher than a topmost surface of the blocking layer. The resist platform layer is etched until exposing top surfaces of the blocking layer to form first openings. The blocking layer, the resist platform layer and the stack film layer are etched based on first openings until exposing top surfaces of the active device layer to form second openings.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile