The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Nov. 07, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Nicolas Louis Breil, San Jose, CA (US);
Wolfgang R. Aderhold, Cupertino, CA (US);
Shashank Sharma, Fremont, CA (US);
Nilay Anil Pradhan, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of forming an electrical contact in semiconductor structure includes performing a selective deposition process on a semiconductor structure having a semiconductor region and a dielectric layer having a trench therewithin, the selective deposition process comprising epitaxially forming a contact layer on the semiconductor region within the trench of the dielectric layer, and performing a microwave anneal process to activate dopants in the epitaxially formed contact layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile