The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Mar. 02, 2022
Applicant:
Ams-osram International Gmbh, Regensburg, DE;
Inventor:
Jelena Ristic, Regensburg, DE;
Assignee:
ams-OSRAM International GmbH, Regensburg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/20 (2026.01); H10F 71/00 (2025.01); H10H 20/01 (2025.01);
U.S. Cl.
CPC ...
H10P 14/3252 (2026.01); H10F 71/1276 (2025.01); H10F 71/1278 (2025.01); H10H 20/0125 (2025.01); H10H 20/01335 (2025.01); H10H 20/0137 (2025.01); H10P 14/2904 (2026.01); H10P 14/2905 (2026.01); H10P 14/2908 (2026.01); H10P 14/2922 (2026.01); H10P 14/3206 (2026.01); H10P 14/3216 (2026.01); H10P 14/3236 (2026.01); H10P 14/3416 (2026.01);
Abstract
In an embodiment a growth substrate includes a substrate and a buffer layer sequence having a plurality of semiconductor layers based on a nitride semiconductor compound material and a plurality of buffer layers, wherein the semiconductor layers and the buffer layers are arranged alternatingly, and wherein the buffer layers comprise at least one of the following two-dimensional layered materials: graphene, boron nitride, MoS, WSeor fluorographene.
Ristic, Jelena. (2026). Growth substrate and method for manufacturing an optoelectronic semiconductor body (U.S. Patent No. 12772751). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772751
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