The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Dec. 27, 2022
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Yutaka Higo, Kanagawa, JP;

Lui Sakai, Kanagawa, JP;

Masaki Endo, Kanagawa, JP;

Keizo Hiraga, Kanagawa, JP;

Masanori Hosomi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01F 10/32 (2006.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01F 10/3286 (2013.01); H10N 50/80 (2023.02);
Abstract

Provided is a magnetoresistive element with a second magnetic layer. The second magnetic layer is a perpendicular magnetization layer when no voltage is applied to the magnetoresistive element, changes from the perpendicular magnetization layer to an in-plane magnetization layer when a first voltage is applied to the magnetoresistive element, and changes from the perpendicular magnetization layer to the in-plane magnetization layer when a second voltage is applied to the magnetoresistive element. Magnetization of the second magnetic layer changes to a first direction of a direction perpendicular to a plane of the layer after a third voltage is applied to the magnetoresistive element for a first period of time and changes to a second direction of the direction perpendicular to the plane of the layer after a fourth voltage is applied to the magnetoresistive element for a second period of time.


Find Patent Forward Citations

Higo, Yutaka. (2026). Magnetoresistive element and magnetic memory (U.S. Patent No. 12772744). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772744

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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