The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Jul. 13, 2022
Riken, Wako, JP;
Masafumi Jo, Saitama, JP;
Hideki Hirayama, Saitama, JP;
Abstract
To improve the emission efficiency of ultraviolet light emitting diodes in the Far-UVC wavelength range, the ultraviolet light emitting diode in one embodiment has a semiconductor layer that includes aluminum, gallium and nitrogen. It may also include Indium. In various embodiments, it may include an AlGaN-based crystal or an InAlGaN-based crystal. The relative atomic ratios of aluminum, gallium, nitrogen and indium may vary at different positions in the layer. The diode comprises a light emitting layer, a spacer layer and an electron blocking layer in this order along the electron flow direction. The Al composition ratio in the spacer layer varies along the position in the thickness direction of the layers. The ultraviolet light emitting diode of the embodiment of the present disclosure can be provided with the emitting layer comprising at least one barrier layer and at least two quantum well layers sandwiching the barrier layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile