The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Mar. 14, 2024
Nichia Corporation, Anan, JP;
Yoshitaka Kawata, Itano-gun, JP;
NICHIA CORPORATION, Anan, JP;
Abstract
A nitride semiconductor light-emitting element includes: a first n-side semiconductor layer; a first active layer disposed on the first n-side semiconductor layer and comprising first barrier layers and first well layers alternately arranged; a first p-side semiconductor layer disposed on the first active layer; a second n-side semiconductor layer disposed on and in contact with the first p-side semiconductor layer; a second active layer disposed on the second n-side semiconductor layer; and a second p-side semiconductor layer disposed on the second active layer. The first barrier layer comprises layers including a first layer located closest to the first n-side semiconductor layer, a second layer located closest to the first p-side semiconductor layer, and a plurality of third layers located between the first layer and the second layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile