The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Jan. 12, 2024
Canon Kabushiki Kaisha, Tokyo, JP;
Mahito Shinohara, Tokyo, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
A photoelectric conversion element is provided in a semiconductor layer having a first and second surfaces and includes a first semiconductor region of a first conductivity type in contact with the first surface, a second semiconductor region of a second conductivity type disposed closer to the second surface than the first semiconductor region, and a third semiconductor region disposed closer to the second surface than the second semiconductor region. The first and second semiconductor regions constitute an avalanche photodiode configured to multiply signal charges generated in the third semiconductor region. A distance between a boundary surface on a side of the second semiconductor region of the first semiconductor region and a boundary surface on a side of the first semiconductor region of the second semiconductor region is minimum in a first portion, and is wider in a second portion different from the first portion than in the first portion.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile