The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Nov. 27, 2023
Xiamen Tianma Display Technology Co., Ltd., Xiamen, CN;
Kazushige Takechi, Kawasaki, JP;
XIAMEN TIANMA DISPLAY TECHNOLOGY CO., LTD., Xiamen, CN;
Abstract
A thin-film transistor substrate includes a first oxide semiconductor film, a second oxide semiconductor film located upper than the first oxide semiconductor film, a first insulating film located lower than the second oxide semiconductor film and covering the first oxide semiconductor film. The first oxide semiconductor film includes first and second low-resistive regions, and a channel region. Each of the first and second low-resistive regions includes a source/drain region. The second oxide semiconductor film includes third and fourth low-resistive regions, and a channel region of a second thin-film transistor. Each of the third and fourth low-resistive regions includes a source/drain region of the second thin-film transistor. A part of the first low-resistive region extending from a source/drain region of the first thin-film transistor is a bottom-gate electrode of the second thin-film transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile