The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Aug. 23, 2023
Applicant:

Semiconductor Components Industries, Llc, Scottsdale, AZ (US);

Inventors:

Balaji Padmanabhan, Chandler, AZ (US);

Prasad Venkatraman, Gilbert, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H10D 30/01 (2025.01); H10D 62/17 (2025.01); H10D 64/00 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 64/117 (2025.01); H10D 30/0297 (2025.01); H10D 30/668 (2025.01); H10D 62/307 (2025.01); H10D 64/01 (2025.01); H10D 64/513 (2025.01); H10D 64/519 (2025.01);
Abstract

In an example, a semiconductor device includes an active trench region and an intersecting trench. The active region includes an active shield electrode and the intersecting trench includes an intersecting shield electrode. A coupling trench region connects the active trench region to the intersecting trench region. The coupling trench region includes a coupling shield electrode. The coupling shield electrode and the intersecting shield electrode are provided proximate to a termination mesa region. One or more of the coupling shield electrode or the intersecting shield electrode is thinner than the active shield electrode. The thinner shield electrode reduces depletion in the termination mesa region to improve, among other things, breakdown voltage performance.


Find Patent Forward Citations

Padmanabhan, Balaji. (2026). Semiconductor device termination structures and methods of manufacturing semiconductor device termination structures (U.S. Patent No. 12772533). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772533

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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