The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Jul. 16, 2021
Rohm Co., Ltd., Kyoto, JP;
Seigo Mori, Kyoto, JP;
Kenji Yamamoto, Kyoto, JP;
Hiroaki Shiraga, Kyoto, JP;
Yuki Nakano, Kyoto, JP;
Keigo Minode, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A SiC semiconductor device includes a SiC chip having a main surface, a trench gate structure formed at the main surface, a trench source structure formed at the main surface away from the trench gate structure in one direction, an insulating film covering the trench gate structure and the trench source structure above the main surface, a gate main surface electrode formed on the insulating film and a gate wiring that is led out from the gate main surface electrode onto the insulating film such as to cross the trench gate structure and the trench source structure in the one direction, and that is electrically connected to the trench gate structure through the insulating film, and that faces the trench source structure with the insulating film between the trench source structure and the gate wiring.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile