Vertical junction field effect transistor including a plurality of mesa regions

Abstract

A vertical junction field effect transistor includes mesa regions and trench structures extending along a first lateral direction in a semiconductor body and arranged alternately along a second lateral direction. The trench structures include a gate contact material electrically connected to a gate region of a first conductivity type in the semiconductor body. A width of the trench structures satisfies one or more of the following conditions: i) the width of at least one trench structure arranged outermost along the second lateral direction is smaller than in a more central part of the trench structures; or ii) the width of at least some trench structures is smaller along an end part in the first lateral direction than in the more central part, an extent of the end part along the first lateral direction being larger than a pitch between neighboring trench structures along the second lateral direction.