The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Jun. 14, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jisoo Park, Suwon-si, KR;
Myung Il Kang, Suwon-si, KR;
Ji Wook Kwon, Suwon-si, KR;
Jung Han Lee, Suwon-si, KR;
Subin Choi, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a substrate, a first sheet pattern on the substrate, a gate electrode on the substrate and surrounding the first sheet pattern, a first source/drain pattern and a second source/drain pattern respectively connected to a first end and a second end of the first sheet pattern, a contact blocking pattern on a lower side of the second source/drain pattern, a first source/drain contact extending in a first direction and connected to the first source/drain pattern, and a second source/drain contact connected to the second source/drain pattern and extending in the first direction to contact an upper surface of the contact blocking pattern. A depth from an upper surface of the gate electrode to a lowermost portion of the first source/drain contact may be greater than a depth from the upper surface of the gate electrode to the upper surface of the contact blocking pattern.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile