The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Mar. 20, 2024
Infineon Technologies Austria Ag, Villach, AT;
Timothy Henson, Mount Shasta, CA (US);
Adam Amali, Chandler, AZ (US);
Kishore Lakhmichand Malani, San Diego, CA (US);
Robert Haase, San Pedro, CA (US);
Infineon Technologies Austria AG, Villach, AT;
Abstract
A transistor device includes: a semiconductor substrate having a termination region interposed between a first active cell region and an edge of the semiconductor substrate; and transistor cells in the first active cell region, each transistor cell including a gate trench formed in a body region of a first conductivity type. The body region extends into the termination region. The termination region includes: a first termination trench laterally surrounding the first active cell region and extending through the body region so that the body region is interrupted in the termination region by the first termination trench; and a first doped region of the first conductivity type that follows the first termination trench and adjoins part of a bottom of the first termination trench. The first doped region terminates deeper in the semiconductor substrate than the body region and is off-center to a longitudinal centerline of the first termination trench.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile