The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Dec. 12, 2023
Applicant:
Nanya Technology Corporation, New Taipei City, TW;
Inventor:
Chih-Wei Huang, Taoyuan City, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H10B 12/00 (2023.01); H10D 30/60 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H10D 30/601 (2025.01); H10B 12/31 (2023.02); H10D 64/021 (2025.01); H10D 64/258 (2025.01);
Abstract
A semiconductor device and a method for preparing the semiconductor structure are provided. The semiconductor device includes a substrate; a gate electrode disposed on the substrate; a first metal contact disposed in the gate electrode; a first spacer disposed on a sidewall of the gate electrode; and a second spacer covering the first spacer; wherein the first spacer includes dopants.
Huang, Chih-Wei. (2026). Semiconductor device including multiple spacers and method for preparing the same (U.S. Patent No. 12772484). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772484
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile