The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Oct. 26, 2021
Rohm Co., Ltd., Kyoto, JP;
Norikazu Ito, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A nitride semiconductor device includes: an electron transport layer constituted by a nitride semiconductor; an electron supply layer formed on the electron transport layer and constituted by a nitride semiconductor that has a larger band gap than the electron transport layer; a gate layer formed on the electron supply layer and constituted by a nitride semiconductor that has a smaller band gap than the electron supply layer and includes an acceptor impurity; a gate electrode formed on the gate layer; and a drain electrode and a source electrode in contact with the electron supply layer. The acceptor impurity includes zinc and magnesium, and the concentration profile of the zinc in the thickness direction of the gate layer is different from the concentration profile of the magnesium in the thickness direction of the gate layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile