The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Aug. 02, 2023
Massachusetts Insitute of Technology, Cambridge, MA (US);
Brown University, Providence, RI (US);
Jeffrey William Daulton, Cambridge, MA (US);
Alexander Zaslavsky, Providence, RI (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Brown University, Providence, RI (US);
Abstract
III-nitride-based hot electron transistors (HETs) offer significant promise as high-speed, high-power devices, but their performance has been limited to below that of competing technologies. A HET with collector current density>440 kA/cmand common-emitter current gain>75 is disclosed. Polarization engineering of the emitter stack was used to allow for high-current collimated electron injection from the emitter with relatively low turn-on voltage. The use of only polarization charge in the undoped 10 nm-thick base allowed for high gain, through minimization of scattering, with atomic layer etching contact fabrication used to lower base access resistance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile