The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Oct. 17, 2023
Applicant:

Nanya Technology Corporation, New Taipei City, TW;

Inventors:

Chiang-Lin Shih, New Taipei City, TW;

Yu-Ting Lin, New Taipei City, TW;

Assignee:

NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/37 (2023.02); H10B 12/315 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02);
Abstract

A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a substrate, a first bit line disposed on the substrate and extending along a first direction, a first word line disposed on the first bit line and extending along a second direction perpendicular to the first direction, a channel structure disposed on the first bit line and penetrating the first word line, and a trench capacitor disposed on the channel structure. The channel structure is separated from the first word line by a gate dielectric layer.


Find Patent Forward Citations

Shih, Chiang-Lin. (2026). Semiconductor device having trench capacitors formed on channel structures and methods for manufacturing the same (U.S. Patent No. 12772439). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772439

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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